The BUK9Y22-30B is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed by NXP Semiconductors. This power MOSFET is specifically engineered to deliver efficiency and reliability for a wide range of applications, including automotive systems, power management, and industrial automation.

Key Features

• Low On-State Resistance: The BUK9Y22-30B features an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
• Standard Level Gate Drive: This MOSFET operates with standard level gate drives, making it compatible with a broad range of existing circuits and systems.
• High-Speed Switching: Designed for fast switching performance, the BUK9Y22-30B is ideal for applications that require rapid power regulation and management.
• Robust Thermal Performance: With an excellent thermal design, this product can handle higher currents and operate efficiently even under elevated temperatures.

Applications

The versatility of the BUK9Y22-30B allows it to be used in various applications, including but not limited to:

• DC/DC converters
• Motor drives
• Power supplies
• Load switches
• Battery management systems

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30 V Continuous Drain Current (I<sub>D) 22 A Power Dissipation (P<sub>D) 43 W Operating Temperature Range -55°C to +175°C Package LFPAK33

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The BUK9Y22-30B is manufactured with rigorous quality control processes to ensure performance and reliability that meet the demands of industrial and automotive applications.