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MMRF2010NR1

Part No MMRF2010NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF LDMOS 250W 50V / RF Mosfet 50 V 80 mA 1.09GHz 32.1dB 250W TO-270 WB-14
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Technology LDMOS
Frequency 1.09GHz
Gain 32.1dB
Voltage - Test 50 V
Current Rating (Amps) 10µA
Current - Test 80 mA
Power - Output 250W
Voltage - Rated 100 V
Mounting Type Chassis Mount
Package / Case TO-270-14 Variant, Flat Leads
Supplier Device Package TO-270 WB-14
Base Product Number MMRF2010
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001
Win Source Part Number 1345941-MMRF2010NR1
Ultra Librarian 3D Model Ultra Librarian MMRF2010NR1 CAD Model

Description

Product Overview: NXP MMRF2010NR1 RF Power Transistor

The NXP MMRF2010NR1 is a robust RF power LDMOS transistor designed for a range of high-frequency applications. This device is part of NXP's advanced product lineup, crafted to deliver exceptional performance in RF power amplification. It is ideal for use in broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as for RF energy solutions.

Key Features

  • Frequency Range: The MMRF2010NR1 operates effectively over a broad frequency range, making it versatile for various RF applications.
  • High Output Power: It is capable of delivering high output power, which is essential for applications that require strong signal amplification.
  • High Efficiency: With its high efficiency, the MMRF2010NR1 ensures that energy consumption is minimized, leading to cost savings and reduced thermal footprints.
  • Thermal Performance: The device features an excellent thermal performance profile, allowing it to maintain stability and reliability even under strenuous operating conditions.
  • Integrated ESD Protection: Electrostatic discharge (ESD) protection is built into the MMRF2010NR1 to safeguard the device from sudden electrical spikes.
  • Durability: Constructed to be rugged, it can withstand the rigors of demanding environments.

Applications

The MMRF2010NR1 is suitable for a variety of applications, including but not limited to:

  • Broadcasting equipment such as FM radio and television transmitters.
  • ISM band applications, including industrial heating, medical diagnostics, and scientific research equipment.
  • RF energy systems used in cooking, lighting, and plasma generation.

Product Specifications

The MMRF2010NR1 is engineered to meet stringent specifications, ensuring reliable and consistent performance. Below are some of the technical specifications:

  • Voltage: It operates at a standard voltage, providing ease of integration into existing systems.
  • Gain: The transistor offers a high gain, which amplifies RF signals effectively.
  • Package: It comes in a robust package that facilitates easy mounting and offers excellent thermal conduction properties.

For engineers and designers looking for a high-performance RF power solution, the NXP MMRF2010NR1 presents an outstanding option that combines power, efficiency, and reliability.

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