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MRF19045LR3

Part No MRF19045LR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.93GHZ NI-400 / RF Mosfet 26 V 550 mA 1.93GHz 14.5dB 9.5W NI-400-240
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Frequency 1.93GHz
Gain 14.5dB
Voltage - Test 26 V
Current - Test 550 mA
Power - Output 9.5W
Voltage - Rated 65 V
Package / Case NI-400
Supplier Device Package NI-400-240
Base Product Number MRF19
Standard Package 250 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8542.31.0001
Win Source Part Number 928059-MRF19045LR3
Ultra Librarian 3D Model Ultra Librarian MRF19045LR3 CAD Model

Description

The MRF19045LR3 is a high-performance RF power LDMOS transistor developed by NXP Semiconductors, a leader in the field of high-frequency power solutions. This device is specifically designed for broadband commercial and industrial applications with frequencies ranging from 1.8 to 2 GHz. Its versatility makes it suitable for a variety of uses, including base station applications for mobile radio.

Key Features

  • Frequency Range: The MRF19045LR3 operates efficiently within the 1.8 to 2 GHz spectrum, making it ideal for a wide range of RF applications.
  • Power Output: It boasts a high output power level of 45 Watts, ensuring reliable performance for high-demand systems.
  • High Gain: With a high gain of 16 dB, this LDMOS transistor amplifies signals effectively, enhancing overall system performance.
  • Efficiency: The device is designed with efficiency in mind, featuring a typical efficiency of 35%, which helps reduce power consumption and heat generation.
  • Integrated ESD Protection: The MRF19045LR3 includes integrated ESD protection, safeguarding the device against electrostatic discharges and enhancing its durability and reliability.
  • Thermally Enhanced Package: The transistor comes in a thermally efficient package, which aids in heat dissipation and extends the product's lifespan under rigorous operational conditions.

Applications

The MRF19045LR3 is primarily used in RF power amplifiers for mobile radio base stations, but it is also suitable for a range of other applications such as commercial two-way radio, industrial, scientific, and medical equipment. Its robust design ensures consistent performance, even in harsh environmental conditions.

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The MRF19045LR3 is manufactured with the highest standards, ensuring that it meets the stringent requirements of the communications industry. Customers can trust in the durability and performance of this RF power LDMOS transistor for their critical communication needs.

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