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MRF21030LR5

Part No MRF21030LR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 2.14GHZ NI-400 / Trans RF MOSFET N-CH 65V 3-Pin NI-400 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 2.14GHz
Gain 13dB
Voltage - Test 28V
Current - Test 250mA
Power - Output 30W
Voltage Rating DC 65V
Package NI-400
Manufacturer Package NI-400
Win Source Part Number 789406-MRF21030LR5
Popularity Medium
Supply and Demand Status Limited
Family Name MRF21030L
Introduction Date March 24, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF21030LR5 CAD Model

Description

Introducing the MRF21030LR5 RF Power Transistor

The MRF21030LR5 is a state-of-the-art RF power transistor designed by NXP Semiconductors, a leader in the field of high-performance radio frequency (RF) solutions. This product is specifically engineered to deliver outstanding performance for a wide range of applications, including but not limited to, cellular base station transmitters, RF energy, and a plethora of other RF power applications.

Key Features of the MRF21030LR5

  • High Efficiency: The MRF21030LR5 is optimized for high efficiency, which is crucial for reducing thermal stress and improving the longevity of the device in high-power applications.
  • Wide Frequency Range: This RF power transistor operates effectively across a broad frequency range, making it highly versatile and suitable for multiple RF applications.
  • Robust Power Output: With an excellent power output capability, the MRF21030LR5 ensures reliable performance even in demanding situations.
  • Thermal Performance: Built with advanced thermal management features, the device maintains stable operation under varying environmental conditions.
  • Integrated ESD Protection: The inclusion of Electrostatic Discharge (ESD) protection shields the device from unexpected voltage spikes, thus enhancing its durability.

Technical Specifications

The MRF21030LR5 boasts impressive technical specifications that cater to the needs of high-performance RF systems:

  • Frequency Range: Designed to operate effectively over a specified frequency band, providing flexibility in application use.
  • Output Power: Delivers a high output power level, which translates into robust signal strength and quality.
  • Gain: Features a high gain value, ensuring that the signal is amplified sufficiently for the intended application.
  • Efficiency: With a focus on energy efficiency, this transistor helps to minimize power losses and supports greener operation.

Applications

The MRF21030LR5 is ideal for a variety of applications, including:

  • Cellular base station transmitters for GSM, CDMA, and LTE networks, where reliable and powerful RF output is essential.
  • RF energy systems that require precise and efficient power delivery.
  • General purpose RF power applications where performance and durability are key considerations.

In summary, the MRF21030LR5 from NXP Semiconductors is a top-tier RF power transistor that combines efficiency, versatility, and robustness to meet the needs of modern RF power applications. With its advanced features and reliable performance, it stands as an excellent choice for system designers and engineers looking to enhance their RF solutions.

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