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MRF6S27085HSR5

Part No MRF6S27085HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.66GHZ NI-780S  /  RF Mosfet LDMOS 28 V 900 mA 2.66GHz 15.5dB 20W NI-780S
Datasheet
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS
Frequency 2.66GHz
Gain 15.5dB
Voltage - Test 28 V
Current - Test 900 mA
Power - Output 20W
Voltage - Rated 68 V
Package / Case NI-780S
Supplier Device Package NI-780S
Base Product Number MRF6
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 50
Win Source Part Number 1080286-MRF6S27085HSR5
Ultra Librarian 3D Model Ultra Librarian MRF6S27085HSR5 CAD Model

Description

MRF6S27085HSR5 - RF Power LDMOS Transistor

The MRF6S27085HSR5 is a high-performance RF power LDMOS transistor from NXP Semiconductors, designed to deliver exceptional performance in a wide range of applications. This device is part of NXP's highly acclaimed RF power transistor product line and is specifically engineered to meet the rigorous demands of high-frequency communication systems.

Operating within the 2.3-2.7 GHz frequency range, the MRF6S27085HSR5 is an ideal component for RF power amplifiers used in wireless broadband networks, including LTE and WiMAX. The transistor offers a high output power of 11 W CW with high gain and efficiency, making it a robust solution for both pulsed and continuous wave applications.

Key Features:

  • Frequency Range: 2.3-2.7 GHz, suitable for a variety of RF applications including wireless broadband.
  • Output Power: 11 W CW, providing strong signal amplification for reliable communication.
  • Gain: High gain performance ensures effective signal transmission over long distances.
  • Efficiency: Enhanced efficiency reduces power consumption and heat dissipation, leading to longer system life.
  • Integrated ESD Protection: Features built-in electrostatic discharge protection to guard against sudden voltage spikes.
  • Thermal Performance: Excellent thermal stability for consistent operation even under high-stress conditions.

The MRF6S27085HSR5 is housed in a compact and rugged package, ensuring durability and ease of integration into various circuit designs. Its superior linearity makes it a preferred choice for applications where signal fidelity is of utmost importance.

NXP's commitment to quality is evident in the MRF6S27085HSR5, which is manufactured to the highest standards to ensure reliable and consistent performance. Whether for commercial or industrial use, this LDMOS transistor is an excellent choice for designers looking to enhance their RF power amplification capabilities.

Note: For detailed technical specifications, application circuits, and installation guidelines, please refer to the official NXP MRF6S27085HSR5 datasheet.

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