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MRF8S9232NR3

Part No MRF8S9232NR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 70V 960MHZ OM780-2 / RF Mosfet N-Channel 28 V 1.4 A 960MHz 18.1dB 63W OM-780-2
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Manufacturer NXP USA Inc.
Packaging Reel - TR
Product Status Obsolete
Transistor Type N-Channel
Frequency 960MHz
Gain 18.1dB
Voltage - Test 28 V
Current - Test 1.4 A
Power - Output 63W
Voltage - Rated 70 V
Case / Package OM-780-2
Supplier Device Package OM-780-2
Base Product Number MRF8S9232
RoHS Status ROHS3 Compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 935310851528
Standard Package 250
Win Source Part Number 1325299-MRF8S9232NR3
Ultra Librarian 3D Model Ultra Librarian MRF8S9232NR3 CAD Model

Description

Introducing the MRF8S9232NR3 RF Power Transistor by NXP

The MRF8S9232NR3 is a high-performance RF power LDMOS transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-frequency power solutions. This robust transistor is specifically engineered for broadband commercial and industrial applications with frequencies ranging from 920 to 960 MHz. Its versatility and reliability make it an ideal choice for RF energy applications, including FM broadcast, industrial, scientific, medical (ISM) applications, and RF plasma lighting.

The MRF8S9232NR3 boasts impressive features that cater to the demands of modern RF systems. It is capable of delivering a powerful output of up to 70 Watts CW over the entire 920 to 960 MHz band. Additionally, the transistor has a high gain of 18 dB, which ensures efficient signal amplification, and a high efficiency of 35%, which minimizes power loss and heat dissipation, enhancing the overall system reliability and longevity.

Constructed using NXP's advanced LDMOS technology, the MRF8S9232NR3 is housed in a robust, thermally-enhanced package that ensures excellent thermal stability and durability. The transistor is designed to withstand a high voltage standing wave ratio (VSWR) of 10:1 at 32 V, which is a testament to its ruggedness and ability to perform reliably under mismatched load conditions.

One of the key benefits of the MRF8S9232NR3 is its ease of integration into various circuit designs. It requires minimal tuning for both broad and narrowband applications, which simplifies the design process and accelerates time-to-market for product developers. The device also features integrated ESD protection, which safeguards against electrostatic discharge events, further enhancing its robustness and reliability.

Overall, the MRF8S9232NR3 from NXP Semiconductors represents a state-of-the-art solution for designers looking to create high-performance RF systems. With its exceptional power output, efficiency, and gain coupled with its rugged design, the MRF8S9232NR3 is poised to deliver top-tier performance in a wide range of applications.

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Quantity Unit Price Ext. Price
1+ $218.0452 $218.0452
2+ $195.4888 $390.9776
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