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MRFE6VP5150GNR1

Part No MRFE6VP5150GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 133V 230MHZ TO-270 GW  /  RF Mosfet LDMOS (Dual) 50 V 100 mA 230MHz 26.1dB 150W TO-270 WB-4 Gull
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel
Transistor Type LDMOS (Dual)
Frequency 230MHz
Gain 26.1dB
Voltage - Test 50 V
Current - Test 100 mA
Power - Output 150W
Voltage - Rated 133 V
Package / Case TO-270BB
Supplier Device Package TO-270 WB-4 Gull
Base Product Number MRFE6
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8541.29.0040
Other Names 935320449528,MRFE6VP5150GNR1TR,MRFE6VP5150GNR1DKR,MRFE6VP5150GNR1CT
Standard Package 500
Win Source Part Number 1006959-MRFE6VP5150GNR1
Ultra Librarian 3D Model Ultra Librarian MRFE6VP5150GNR1 CAD Model

Description

Product Overview: MRFE6VP5150GNR1 by NXP

The MRFE6VP5150GNR1 is a high-performance RF power transistor from the renowned semiconductor manufacturer, NXP Semiconductors. Designed to operate at high frequencies, this device is a perfect fit for a wide range of applications, including broadcast transmission, industrial, scientific, medical applications, and high-power RF applications.

Key Features

  • Frequency Range: The transistor is capable of operating over a broad frequency range, making it versatile for various applications.
  • Power Output: This component delivers a high output power, which is essential for applications that require strong signal transmission or amplification.
  • Efficiency: The MRFE6VP5150GNR1 is designed for high efficiency, reducing power losses and improving overall system performance.
  • Ruggedness: NXP's device is built to withstand harsh conditions, ensuring reliable performance even under stress.
  • Thermal Management: Excellent thermal characteristics allow for better heat dissipation, which is critical for maintaining performance and longevity.

Applications

The versatility of the MRFE6VP5150GNR1 makes it suitable for a variety of applications, including:

  • Broadcast transmitters for radio and television
  • Industrial heating and plasma generation
  • Medical applications such as MRI and RF ablation
  • Particle accelerators and fusion research
  • Military communications and radar systems

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the MRFE6VP5150GNR1 is no exception. It is manufactured to meet the highest industry standards, ensuring both reliability and durability. Users can trust this component to deliver consistent performance over time, backed by NXP's reputation for excellence in semiconductor technology.

Conclusion

Whether you are designing a system for broadcast, industrial, medical, or defense applications, the MRFE6VP5150GNR1 offers the performance and reliability you need. With its broad frequency range, high power output, and efficient operation, this RF power transistor from NXP stands out as a top choice for engineers and designers looking for a high-quality component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $167.9105 $167.9105
2+ $162.3135 $324.6270
3+ $145.5224 $436.5672
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Availability: 538 pieces
Order Increment : 1 pcs
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