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MRFE6VP5150NR1

Part No MRFE6VP5150NR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS DL 50V TO270 / RF Mosfet 50 V 100 mA 230MHz 26.1dB 150W TO-270 WB-4
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Active
Technology LDMOS
Configuration Dual
Frequency 230MHz
Gain 26.1dB
Voltage - Test 50 V
Current - Test 100 mA
Power - Output 150W
Voltage - Rated 133 V
Mounting Type Surface Mount
Package / Case TO-270AB
Supplier Device Package TO-270 WB-4
Base Product Number MRFE6
Standard Package 500 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8541.29.0040
Win Source Part Number 928106-MRFE6VP5150NR1
Ultra Librarian 3D Model Ultra Librarian MRFE6VP5150NR1 CAD Model

Description

Product Overview: MRFE6VP5150NR1

The MRFE6VP5150NR1 is a high-performance RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This solid-state device is specifically engineered to deliver exceptional power and efficiency for a wide array of applications, including industrial, scientific, medical, broadcast, aerospace, and mobile radio systems.

Key Features

  • Frequency Range: The transistor operates over a broad frequency range, making it suitable for various applications. It is capable of delivering reliable performance from HF to 600 MHz.
  • High Output Power: With an impressive output power of 150 W CW, the MRFE6VP5150NR1 is designed to handle demanding applications that require high power levels.
  • High Efficiency: Energy efficiency is a critical aspect of RF power devices. This transistor offers a high drain-source efficiency, minimizing energy loss and heat generation during operation.
  • Robustness: The MRFE6VP5150NR1 is built to withstand harsh conditions, featuring a high ruggedness rating that ensures reliable performance even under extreme VSWR conditions.
  • Thermal Management: Effective thermal management is essential for maintaining the longevity and performance of RF power transistors. This device is equipped with advanced thermal features to ensure stability and durability.

Applications

  • Industrial heating and plasma generation
  • Medical applications such as MRI and RF ablation
  • Broadcast transmitters for AM, FM, and digital audio broadcasting
  • Aerospace and defense communication systems
  • Professional mobile radio and public safety systems

The MRFE6VP5150NR1 is housed in a ceramic package, which provides excellent environmental protection and mechanical durability. Its design is optimized for ease of integration into a wide variety of circuit topologies, allowing for flexible implementation in both new designs and existing systems seeking an upgrade in performance.

With its combination of power, efficiency, and ruggedness, the MRFE6VP5150NR1 from NXP Semiconductors is a versatile and reliable choice for high-power RF applications that demand the best in performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $104.8873 $104.8873
2+ $101.5038 $203.0076
3+ $98.1204 $294.3612
4+ $87.9700 $351.8800
!
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* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 171 pieces
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