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PBSS8110S

Part No PBSS8110S
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 1A TO92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 200mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 150 @ 250mA, 10V
Maximum Power Dissipation 830mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 042054-PBSS8110S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PBSS8110S CAD Model

Description

Introducing the NXP PBSS8110S High-Performance Transistor

Discover the cutting-edge NXP PBSS8110S, a high-efficiency, low V<sub>CEsat (Collector-Emitter saturation voltage) bipolar junction transistor designed to meet the rigorous demands of modern electronic applications. This innovative component is part of NXP's portfolio of low V<sub>CEsat BISS transistors, delivering exceptional performance in a compact SOT363 package.

Key Features of the PBSS8110S

  • Low Collector-Emitter Saturation Voltage: The PBSS8110S boasts a very low V<sub>CEsat, which minimizes power loss and enhances efficiency, making it ideal for high-switching applications.
  • High Current Capability: With a collector current rating of up to 1 A, this transistor can handle high current loads, ensuring reliable operation in demanding situations.
  • High Collector-Emitter Breakdown Voltage: A V<sub>CEO of 100 V provides a generous safety margin for a wide range of applications, from industrial to consumer electronics.
  • High h<sub>FE (DC current gain): This feature ensures that the transistor can be driven with lower base currents, making it suitable for low-power drive circuits.
  • Fast Switching Speeds: Its rapid switching capability enables high-frequency operation, which is crucial for power management in modern electronic circuits.

Applications

The versatility of the PBSS8110S allows it to be utilized in a variety of applications, including:

  • Switching regulators
  • DC-DC converters
  • Power management functions
  • Load switches
  • Motor control circuits
  • Amplification stages in high-frequency applications

Reliability and Performance

The NXP PBSS8110S is designed to offer robust performance with a high degree of reliability. Its SOT363 package is not only space-efficient but also ensures optimal thermal management. This transistor is a prime choice for designers who require a high-performance component that can operate effectively under various conditions without compromising on power efficiency or space.

With its combination of low power dissipation, high current handling, and fast switching speeds, the PBSS8110S from NXP stands out as a superior choice for engineers looking to enhance the performance and efficiency of their electronic designs.

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