The NXP PBSS8110T/DG is a state-of-the-art, low VCEsat (collector-emitter saturation voltage) Bipolar Junction Transistor (BJT) from NXP Semiconductors, designed for high efficiency and power management in a compact, surface-mount package. This transistor is part of the BISS (Breakthrough In Small Signal) portfolio, which is known for providing high performance in small signal switching and amplification applications.

Key Features

• Low Collector-Emitter Saturation Voltage: The low VCEsat feature minimizes power loss during operation, making the PBSS8110T/DG ideal for energy-sensitive circuits.
• High Collector Current: With a maximum collector current (IC) of 1 A, this transistor can handle significant power for its size, suitable for a range of applications.
• High Collector-Emitter Breakdown Voltage: A BVCEO of 100 V provides a good safety margin for applications with high voltage requirements.
• High Current Gain Bandwidth Product: The fT of 160 MHz enables the device to be used in high-frequency signal processing applications.
• Low Power Dissipation: The device has a total power dissipation of 1.25 W, which helps in maintaining thermal efficiency.
• RoHS Compliant: The PBSS8110T/DG meets the Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in environmentally-sensitive products.

Applications

The NXP PBSS8110T/DG is versatile and can be used in a wide range of applications, including:

• Switching and linear amplification
• Power management in portable devices
• DC-DC converters
• Load switches
• Motor control circuits
• Charge and discharge switches for battery management

Package and Quality Assurance

The PBSS8110T/DG comes in a compact SOT23 (TO-236AB) surface-mount package, which is ideal for automated assembly processes and space-constrained applications. NXP's commitment to quality ensures that each transistor meets rigorous industry standards for reliability and performance.