The NXP PDTA113ET,215 is a high-quality PNP transistor that is designed for use in a wide range of electronic applications. This versatile component is part of NXP's series of PNP transistors that are known for their reliability and performance. It is a surface-mount device encapsulated in a small SOT-23 plastic package, making it suitable for automated assembly processes and applications where space is at a premium.

Key Features

• Type: PNP Resistor-Equipped Transistor (RET)
• Package: SOT-23
• Collector-Emitter Voltage (Vceo): -50V
• Collector Current (Ic): -100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 100 at -10mA, -10V
• Integrated Resistors: Yes, 1 kΩ base resistor and 10 kΩ resistor between base and emitter
• Operating Temperature Range: -55°C to +150°C

Applications

The PDTA113ET,215 is ideal for use in various applications including, but not limited to:

• Switching loads
• Inverter circuits
• Signal processing
• Driver stages in amplifiers
• Power management

Quality and Reliability

As with all NXP products, the PDTA113ET,215 is manufactured to the highest quality standards. The device is designed for long-term reliability and stable operation under diverse environmental conditions, making it a preferred choice for industry professionals. Its integrated resistors not only simplify circuit design but also reduce component count, which enhances overall system reliability.

Environmental Compliance

NXP is committed to environmental sustainability. The PDTA113ET,215 is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it does not contain any hazardous materials. This compliance supports the use of this transistor in electronic products that are environmentally friendly and safe for consumers.