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PDTA123EM,315

Part No PDTA123EM,315
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW SOT883
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 30 @ 20mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package DFN1006-3
Win Source Part Number 140827-PDTA123EM,315
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PDTA123EM,315 CAD Model

Description

The NXP PDTA123EM,315 is a high-quality PNP Resistor-Equipped Transistor (RET) that offers a compact, surface-mount solution for a variety of applications. This innovative device integrates a bias resistor network into a single package, which simplifies circuit design and reduces component count. The PDTA123EM,315 is part of NXP's family of RETs that are designed to deliver high performance and reliability.

Key Features

  • Simplified Circuit Design: With built-in bias resistors, this RET simplifies the circuit design process, allowing for a more streamlined and efficient PCB layout.
  • Space Saving: The small SOT-416 (SC-75) surface-mount package is ideal for space-constrained applications, enabling designers to maximize functionality in a minimal footprint.
  • High Performance: The device offers excellent hFE linearity and high current gain, making it suitable for amplification and switching applications.
  • Low Power Consumption: The PDTA123EM,315 is designed for low power consumption, which is critical for battery-powered and energy-efficient devices.
  • Robustness: The product features a robust thermal performance, ensuring reliability across a wide range of operating conditions.

Applications

The NXP PDTA123EM,315 is versatile and can be used in various applications, including but not limited to:

  • Automotive modules
  • Power management systems
  • Signal processing
  • Control systems
  • Consumer electronics

Technical Specifications

Parameter Value Package SOT-416 (SC-75) Configuration Single Collector-Emitter Voltage (VCEO) 50V Collector Current (IC) 100 mA Power Dissipation (Ptot) 250 mW Resistance Ratio, R1/R2 10

For those seeking a reliable and efficient PNP RET, the NXP PDTA123EM,315 is an excellent choice that combines performance with practicality, making it a valuable component in a wide array of electronic products.

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