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PDTB113ET,215

Part No PDTB113ET,215
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW TO236AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
Typical Gain (hFE) (Min) 33 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 042084-PDTB113ET,215
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PDTB113ET,215 CAD Model

Description

The PDTB113ET,215 is a high-performance, PNP bipolar digital transistor housed in a small SOT-23 plastic package, designed and manufactured by NXP Semiconductors. This transistor is part of NXP's portfolio of digital transistors (BRTs - Bipolar Resistor Transistors), which integrate resistors and single transistors, offering a compact solution for a wide range of switching and amplification applications.

Key Features

  • Transistor Type: PNP bipolar digital transistor, simplifying circuit design by integrating the bias resistors.
  • Package: Comes in a SOT-23 surface-mount package, which is widely used in the industry due to its small footprint and ease of integration into various circuit designs.
  • Current Handling: Capable of handling collector currents up to 100 mA, making it suitable for moderate power applications.
  • Integrated Resistors: Includes built-in bias resistors, which help to reduce component count and simplify PCB layout. This integration can lead to increased reliability and a reduction in production costs.
  • Low V<sub>CEsat: Offers low collector-emitter saturation voltage, which enhances efficiency by minimizing voltage drop and power loss during operation.

Applications

The PDTB113ET,215 is versatile and can be used in various applications, including but not limited to:

  • Switching loads
  • Input/Output stages in digital circuits
  • Driver circuits
  • Signal processing
  • Control systems

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality and reliability. The PDTB113ET,215 is built to meet high industry standards, ensuring stable performance and durability in a wide range of environmental conditions. Whether used in commercial, industrial, or even more demanding applications, this transistor is designed to provide consistent operation over its lifetime.

Conclusion

In summary, the PDTB113ET,215 from NXP is a robust and efficient PNP bipolar digital transistor that offers the convenience of integrated bias resistors, a small footprint, and reliable performance. It is an excellent choice for designers seeking to optimize their circuit designs with a compact, efficient, and high-quality component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1721 $60.2699
45+ $2.6028 $117.1260
69+ $2.5215 $173.9835
95+ $2.4402 $231.8190
123+ $2.3587 $290.1201
164+ $2.1148 $346.8272
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Availability: 3,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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