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PH2925U,115

Part No PH2925U,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 950mV @ 1mA
Max Gate Charge 92nC @ 4.5V
Max Input Capacitance 6150pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 25A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 137243-PH2925U,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PH2925U,115 CAD Model

Description

Product Overview: PH2925U,115 by NXP Semiconductors

The PH2925U,115 is a state-of-the-art MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance component is specifically engineered to meet the rigorous demands of modern electronic circuits, offering a perfect blend of efficiency, reliability, and power handling capabilities.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which significantly reduces conduction losses and enhances overall efficiency, making it ideal for power-intensive applications.
  • High-Speed Switching: With its fast switching capabilities, the PH2925U,115 is well-suited for high-frequency operations, contributing to improved performance in switching regulators, converters, and power management systems.
  • Thermal Performance: The MOSFET is encapsulated in a robust package that offers excellent thermal characteristics, ensuring stable operation even under high-temperature conditions.
  • High Power Density: Its compact size combined with high power density makes it an excellent choice for space-constrained applications while still delivering the power required for demanding tasks.

Applications

The versatility of the PH2925U,115 allows it to be used in a wide array of applications, including but not limited to:

  • DC/DC converters
  • Power supply modules
  • Motor control circuits
  • Automotive systems
  • Telecommunication infrastructure

Product Specifications

This MOSFET operates with a drain-source voltage (Vds) that supports applications requiring high voltage thresholds. It also features a continuous drain current (Id) at a level that ensures reliable operation over a wide range of conditions. The gate threshold voltage (Vgs th) is set to accommodate various logic levels, allowing for flexible design options.

In summary, the PH2925U,115 from NXP Semiconductors is a high-quality, versatile MOSFET that offers an excellent balance of power handling, efficiency, and thermal performance. Its robust design and superior electrical characteristics make it a top choice for engineers and designers looking to enhance their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0642 $52.0914
40+ $2.5143 $100.5720
62+ $2.4357 $151.0134
85+ $2.3571 $200.3535
110+ $2.2786 $250.6460
147+ $2.0428 $300.2916
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,830 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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