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PH5330E,115

Part No PH5330E,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 2010pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 111619-PH5330E,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PH5330E,115 CAD Model

Description

Product Overview: PH5330E,115 - NXP

The PH5330E,115 is a cutting-edge, high-performance product from NXP Semiconductors, designed to cater to a wide range of applications requiring efficient power management and control. This robust component is part of NXP's extensive portfolio of semiconductors that are engineered to meet the rigorous demands of the modern electronics industry.

Key Features

  • Advanced Technology: The PH5330E,115 is built using the latest semiconductor technology, ensuring high efficiency and reliability.
  • High Power Density: This product is capable of handling high power levels while maintaining a compact form factor, making it ideal for space-constrained applications.
  • Low On-Resistance: The device features a very low on-state resistance, which minimizes power loss and improves overall performance.
  • Thermal Management: With excellent thermal properties, the PH5330E,115 maintains stability and performance even under high temperature operating conditions.
  • Versatility: It is suitable for a wide variety of applications, including switching regulators, power management systems, and motor control circuits.

Applications

The PH5330E,115 from NXP is versatile enough to be used in numerous applications across different sectors. It is particularly well-suited for:

  • DC-DC converters
  • Power supplies for telecommunications
  • Automotive systems
  • Industrial control modules
  • Energy management solutions

Product Specifications

This device boasts a robust set of specifications that ensure its suitability for high-demand environments:

  • Package: SOT-669
  • Drain-source voltage (Vds): High voltage capacity
  • Gate-source voltage (Vgs): Optimized for standard drive voltages
  • Continuous drain current (Id): High current capability
  • Power dissipation (Pd): Efficient power handling

In summary, the PH5330E,115 from NXP is a highly efficient and reliable semiconductor device that offers superior performance for power management applications. Its advanced technology, combined with its high power density and low on-resistance, make it an excellent choice for designers and engineers looking to optimize their systems for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.4698 $56.8188
13+ $7.7701 $101.0113
20+ $7.5273 $150.5460
28+ $7.2845 $203.9660
36+ $7.0417 $253.5012
48+ $6.3132 $303.0336
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,480 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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