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PHB55N03LTA

Part No PHB55N03LTA
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 55A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 061461-PHB55N03LTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHB55N03LTA CAD Model

Description

The PHB55N03LTA is a cutting-edge TrenchMOS™ logic level FET from NXP Semiconductors, renowned for its high efficiency and performance in a wide range of applications. This particular MOSFET is designed to deliver optimal performance with a logic level gate drive, making it a perfect choice for modern electronic circuits that require efficient power management and switching capabilities.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which ensures that it can be driven by low-voltage logic signals. This makes it compatible with contemporary microcontroller-based systems that operate at lower voltages.
  • High-Speed Switching: With its fast switching characteristics, the PHB55N03LTA is ideal for high-frequency applications, ensuring minimal losses and improved overall efficiency.
  • Low On-State Resistance (R<sub>DS(on)): The MOSFET offers a very low on-state resistance, which reduces conduction losses and helps in achieving higher energy efficiency in applications.
  • High Power Dissipation: It has an impressive power dissipation capability, which enables it to handle high currents without overheating, thus ensuring reliability and longevity of the device.
  • TrenchMOS™ Technology: Utilizing NXP's advanced TrenchMOS™ technology, the PHB55N03LTA provides superior performance compared to traditional planar MOSFETs.

Applications

The versatility of the PHB55N03LTA makes it suitable for a diverse range of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Load switches
  • Battery management systems
  • Automotive applications

Specifications

The PHB55N03LTA boasts an impressive set of specifications that cater to the demanding needs of modern electronics:

  • Drain-source voltage (V<sub>DS): 30V
  • Continuous drain current (I<sub>D): 55A
  • Power dissipation (P<sub>D): 110W
  • Low threshold voltage (V<sub>GS(th))
  • Operating temperature range: -55°C to 175°C

With its robust design and high-performance characteristics, the PHB55N03LTA from NXP is an excellent choice for designers looking to improve the efficiency and reliability of their power-sensitive applications.

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