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PHK18NQ03LT

Part No PHK18NQ03LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.15V @ 1mA
Max Gate Charge 10.6nC @ 4.5V
Max Input Capacitance 1380pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Tc)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 209937-PHK18NQ03LT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHK18NQ03LT CAD Model

Description

NXP PHK18NQ03LT MOSFET Overview

The NXP PHK18NQ03LT is a high-performance, low-threshold N-channel TrenchMOS™ field-effect transistor that stands out for its efficiency and reliability in a wide range of applications. This advanced power MOSFET is designed to deliver optimal performance with a low on-state resistance, making it a preferred choice for power management tasks in electronic circuits.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which ensures that it can be driven by low-voltage control signals, making it suitable for use in logic-level drive applications.
  • High-Speed Switching: With its fast switching capabilities, the PHK18NQ03LT is ideal for high-frequency applications, contributing to improved overall system efficiency.
  • Low On-State Resistance: The MOSFET's low R<sub>DS(on) minimizes conduction losses, providing better energy efficiency and reduced heat dissipation requirements.
  • Robust Thermal Performance: Its design allows for excellent thermal conduction, which helps maintain stability and prolongs the lifespan of the device under high power conditions.

Applications

The versatility of the NXP PHK18NQ03LT makes it suitable for a broad spectrum of applications, including:

  • DC-DC converters
  • Motor drives
  • Power management systems
  • Switching regulators
  • Load switches
  • Battery management circuits

Product Specifications

Parameter Value Type N-channel Drain-Source Voltage (V<sub>DS) 30 V Continuous Drain Current (I<sub>D) 18 A Power Dissipation (P<sub>D) 45 W Operating Temperature Range -55°C to +175°C

With its exceptional performance characteristics and robust design, the NXP PHK18NQ03LT MOSFET is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
545+ $0.2125 $115.8125
840+ $0.2067 $173.6280
1,160+ $0.1998 $231.7680
1,500+ $0.1929 $289.3500
2,000+ $0.1733 $346.6000
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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