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PHM25NQ10T,518

Part No PHM25NQ10T,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 30.7A 8HVSON
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 30.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 26.6nC @ 10V
Max Input Capacitance 1800pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 62.5W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HVSON (6x5)
Dimension 8-VDFN Exposed Pad
Win Source Part Number 1087819-PHM25NQ10T,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHM25NQ10T,518 CAD Model

Description

The PHM25NQ10T,518 is a cutting-edge MOSFET device produced by NXP Semiconductors, a leader in the semiconductor industry. This product is designed to meet the high demands of modern electronic circuits, providing efficient power management and switching with high reliability.

Key Features

  • Low On-Resistance: The MOSFET features a low on-resistance, which translates to reduced power loss during operation and enhances overall efficiency.
  • High-Speed Switching: It is capable of high-speed switching, making it suitable for applications that require fast response times.
  • Enhanced Thermal Performance: The device is designed with an optimized thermal management system, ensuring it operates within safe temperature ranges under high power conditions.
  • Robust Design: The PHM25NQ10T,518 is built to withstand harsh conditions and provide stable performance over its lifetime, making it a reliable choice for critical applications.

Applications

This MOSFET is versatile and can be used in various applications, including but not limited to:

  • Power supply units
  • DC-DC converters
  • Motor control circuits
  • Automotive applications
  • Switching regulators

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100V Continuous Drain Current (I<sub>D) 25A Power Dissipation (P<sub>D) 45W R<sub>DS(on) Typ. 8.2 mΩ Package TO-220

The PHM25NQ10T,518 MOSFET by NXP Semiconductors is a testament to the company's commitment to providing high-performance components that drive innovation in electronics. Its robustness, efficiency, and versatility make it an ideal choice for designers and engineers looking to create reliable and efficient electronic solutions.

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