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PHP3055E

Part No PHP3055E
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10.3A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 5.8nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 042116-PHP3055E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHP3055E CAD Model

Description

The NXP PHP3055E represents a high-performance, N-channel TrenchMOS™ field-effect transistor (FET) designed to deliver efficient power management and conversion within a wide array of electronic applications. This particular MOSFET is part of NXP's acclaimed TrenchMOS portfolio, which is renowned for providing low on-state resistance (R<sub>DS(on)) and significantly reduced switching losses.

Key Features

  • Low Threshold Voltage: The PHP3055E offers a low threshold voltage, enabling it to be driven at lower gate voltages, which makes it suitable for low-voltage applications and contributes to its high efficiency.
  • High-Speed Switching: With its fast switching capabilities, the PHP3055E is ideal for high-frequency power switching applications, which demand quick response times and minimal power losses.
  • Enhanced Power Density: Thanks to NXP's TrenchMOS technology, this MOSFET achieves a higher power density, allowing for more compact designs without sacrificing performance.
  • Robust Thermal Performance: The PHP3055E is designed to operate reliably even at elevated temperatures, which is critical for maintaining performance in thermally challenging environments.

Applications

The versatility of the NXP PHP3055E MOSFET makes it suitable for a broad range of applications, including:

  • DC/DC converters
  • Power supplies for telecom and computing systems
  • Motor control circuits
  • Automotive applications
  • Switching regulators

Product Specifications

The NXP PHP3055E boasts impressive electrical characteristics that cater to the demands of modern electronic circuits:

  • Voltage Rating: The device supports a drain-source voltage (V<sub>DSS) of up to 55V, providing a wide operational range for various applications.
  • Current Handling: It can handle continuous drain currents (I<sub>D) of up to 110A, ensuring robust current handling capability.
  • Package: The MOSFET is available in a plastic package, which is designed to optimize the thermal and electrical performance while maintaining a compact footprint.

With its combination of efficiency, speed, and reliability, the NXP PHP3055E MOSFET is a solid choice for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1504 $61.5040
23+ $5.0462 $116.0626
36+ $4.8891 $176.0076
49+ $4.7309 $231.8141
64+ $4.5738 $292.7232
85+ $4.1003 $348.5255
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 4,870 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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