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PMBT4401/G

Part No PMBT4401/G
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A SOT23
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single
Manufacturer NXP
Packaging Reel(TR)
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V
Power - Max 250mW
Frequency - Transition 250MHz
Mounting Style SMD/SMT
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Device Package SOT-23 (TO-236AB)
Win Source Part Number 004385-PMBT4401/G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMBT4401/G CAD Model

Description

The NXP PMBT4401/G is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of applications. This compact surface-mount device is known for its low voltage operation and high current handling capabilities, making it an ideal choice for energy-efficient designs.

Key Features

  • Transistor Type: NPN - This allows for efficient switching and amplification of electrical signals.
  • Package: SOT-23 - A small and versatile package that is suitable for automated assembly processes and space-constrained applications.
  • Collector-Emitter Voltage (Vceo): 40V - Provides a good balance between breakdown voltage and low voltage operation for a variety of circuits.
  • Collector Current (Ic): 600mA - Capable of handling a substantial current load, suitable for driving moderate loads.
  • DC Current Gain (hFE): 100 to 300 - Ensures a good amplification factor, which is crucial for applications that require signal amplification.
  • Transition Frequency (fT): 100MHz - High-frequency performance makes it suitable for RF applications and fast switching circuits.
  • Low Collector-Emitter Saturation Voltage: This feature helps to minimize on-state power dissipation, enhancing energy efficiency.

Applications

The PMBT4401/G transistor is versatile enough to be used in a variety of electronic circuits. It is commonly found in:

  • Switching and Linear Amplification
  • Audio Amplifiers
  • Signal Processing
  • Power Management Circuits
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PMBT4401/G transistor is no exception. It is built to meet high standards of reliability and performance, ensuring that it can withstand the demands of both commercial and industrial applications.

Environmental Compliance

The PMBT4401/G is designed with environmental considerations in mind. It complies with RoHS standards, which restricts the use of certain hazardous materials in electronic equipment, making it a more environmentally friendly choice for electronics manufacturers.

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