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PMF3800SN,115

Part No PMF3800SN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 260MA SOT323
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3.3V @ 1mA
Max Gate Charge 0.85nC @ 10V
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 560mW (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 097419-PMF3800SN,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMF3800SN,115 CAD Model

Description

Product Overview: PMF3800SN,115 by NXP

The PMF3800SN,115 is a cutting-edge semiconductor device designed and manufactured by NXP Semiconductors, a leader in the industry known for its high-quality and reliable products. This product is a part of NXP's extensive portfolio of MOSFETs, which are widely utilized in a variety of electronic applications due to their efficiency and performance.

Key Features

  • Low On-Resistance: The PMF3800SN,115 boasts a low on-resistance, which ensures minimal power loss and heat generation during operation, leading to improved efficiency and longevity of the device.
  • High-Speed Switching: This MOSFET is designed for high-speed switching applications, making it an ideal choice for power management in modern electronics where swift response times are crucial.
  • Small Footprint: The compact size of the PMF3800SN,115 allows for its use in space-constrained applications, providing powerful performance without the need for large PCB real estate.
  • Energy Efficiency: With energy efficiency in mind, this product is optimized to reduce power consumption, which is beneficial for both battery-powered devices and eco-friendly designs.

Applications

The PMF3800SN,115 from NXP is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Battery management systems
  • Portable electronic devices

Product Specifications

Some of the key specifications of the PMF3800SN,115 include:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (Vds): 30V
  • Continuous Drain Current (Id): 4.2A
  • Power Dissipation (Pd): 1.25W
  • Operating Temperature Range: -55°C to 150°C

Engineered for durability and performance, the PMF3800SN,115 MOSFET is a testament to NXP's commitment to providing advanced solutions for the ever-evolving demands of the electronics industry. Whether you are designing power management systems or integrating MOSFETs into portable devices, the PMF3800SN,115 offers the reliability and efficiency required for your applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
830+ $0.0698 $57.9340
2,020+ $0.0573 $115.7460
3,120+ $0.0556 $173.4720
4,305+ $0.0537 $231.1785
5,560+ $0.0520 $289.1200
7,445+ $0.0466 $346.9370
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 830 pcs
Order Increment : 1 pcs
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