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PHD82NQ03LT,118

Part No PHD82NQ03LT,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 16.7nC @ 5V
Max Input Capacitance 1620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1087804-PHD82NQ03LT,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD82NQ03LT,118 CAD Model

Description

The NXP PHD82NQ03LT,118 is a high-performance, N-channel TrenchMOS™ logic level field-effect transistor (FET) designed for use in a wide range of applications. This particular MOSFET is known for its low threshold voltage, making it compatible with logic-level drive voltages, which simplifies the interfacing with microcontrollers and other logic devices.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which allows it to be driven by logic-level voltages that are typically found in digital circuits.
  • High Efficiency: With its low on-state resistance (R<sub>DS(on)), the PHD82NQ03LT,118 provides high efficiency, which helps in reducing power losses and improving overall system performance.
  • High-Speed Switching: The MOSFET is designed for fast switching applications, making it suitable for high-frequency power conversion and management tasks.
  • Robust Thermal Performance: The device comes in a TO-252 (DPAK) package, which offers excellent thermal conduction properties, ensuring reliable operation even under high temperature conditions.
  • Logic Level Compatibility: Its compatibility with 5V logic signals makes it a versatile component for interfacing with various digital control circuits without the need for additional level shifting.

Applications

The NXP PHD82NQ03LT,118 MOSFET is suitable for various applications including:

  • DC/DC converters
  • Power management circuits
  • Motor control systems
  • Automotive applications
  • Switched mode power supplies
  • Load switches

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 82A Power Dissipation (P<sub>D) 110W On-State Resistance (R<sub>DS(on)) 8.5 mΩ

The NXP PHD82NQ03LT,118 is a testament to NXP's commitment to providing high-quality, reliable semiconductor products. Its robust design and compatibility with logic-level signals make it an ideal choice for designers looking for a high-performance FET that is easy to integrate into their systems.

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