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PMN55LN,135

Part No PMN55LN,135
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.1A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 13.1nC @ 10V
Max Input Capacitance 500pF @ 20V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.75W (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 102208-PMN55LN,135
Popularity Medium
Supply and Demand Status Balance
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian PMN55LN,135 CAD Model

Description

The NXP PMN55LN,135 is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed to address a wide range of applications, offering a perfect balance between efficiency and reliability. This device is part of NXP's extensive portfolio of MOSFETs that are well-suited for power management tasks in both consumer and industrial electronics.

Key Features

  • Low On-Resistance: The PMN55LN,135 features a low on-resistance, which significantly reduces conduction losses and improves overall efficiency, making it an ideal choice for power-intensive applications.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET provides quick response times, which is critical for high-frequency circuits and power converters.
  • Enhanced Thermal Performance: With its optimized thermal characteristics, the PMN55LN,135 can handle higher currents and operate at elevated temperatures without compromising the lifespan of the device.
  • Low Gate Charge: The low gate charge of the PMN55LN,135 facilitates efficient switching performance, which is especially beneficial in applications where power conservation is paramount.
  • Robust Package Design: Encased in a compact, surface-mount package, this MOSFET is designed for space-constrained applications while providing robust mechanical and thermal protection.

Applications

The versatility of the NXP PMN55LN,135 MOSFET allows it to be used in a variety of circuits and products. It is particularly suitable for:

  • Power supply units
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Automotive applications
  • Portable and battery-powered devices

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 46A Power Dissipation (P<sub>D) 43W Operating Temperature Range -55°C to +150°C

In summary, the NXP PMN55LN,135 MOSFET is a reliable and efficient solution for designers looking to optimize their power management systems with a component that offers high-speed switching, low power loss, and robust performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7921 $62.2973
30+ $3.9328 $117.9840
46+ $3.8092 $175.2232
63+ $3.6868 $232.2684
82+ $3.5632 $292.1824
109+ $3.1947 $348.2223
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,500 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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