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PMWD19UN,518

Part No PMWD19UN,518
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.6A 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.6A
Maximum Rds On at Id,Vgs 23 mOhm @ 3.5A, 4.5V
Gate-Source Threshold Voltage 700mV @ 1mA
Max Gate Charge 28nC @ 5V
Max Input Capacitance 1478pF @ 10V
Maximum Power Dissipation 2.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 004430-PMWD19UN,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMWD19UN,518 CAD Model

Description

The PMWD19UN,518 is a state-of-the-art MOSFET transistor engineered by NXP Semiconductors, a leader in the electronic components industry. Designed to meet the demanding requirements of modern electronic circuits, this product offers a perfect blend of efficiency, reliability, and performance.

Key Features

  • Low On-Resistance: The PMWD19UN,518 boasts a very low on-resistance, which translates to reduced power loss and improved energy efficiency in applications.
  • High-Speed Switching: This MOSFET is capable of high-speed switching, making it ideal for high-frequency applications and power management solutions.
  • Small Footprint: The compact size of the PMWD19UN,518 allows for a smaller PCB layout, providing more room for other components or enabling smaller overall product designs.
  • Robust Thermal Performance: With an excellent thermal performance, this product can handle significant power without overheating, ensuring longevity and stable operation.

Applications

The PMWD19UN,518 is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Automotive electronics
  • Portable devices

Product Specifications

The PMWD19UN,518 MOSFET comes with an array of specifications that make it suitable for a wide range of uses. It operates with a drain-source voltage (Vds) that supports common circuit designs, while its current rating (Id) is sufficient for handling typical loads. The gate threshold voltage (Vgs) is set to ensure easy integration with existing control circuits.

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products. The PMWD19UN,518 is manufactured with rigorous quality control processes, ensuring that each component meets the highest standards of performance and reliability. Whether for commercial or industrial applications, this MOSFET is designed to perform consistently over its lifetime, giving designers and engineers peace of mind.

For detailed technical specifications, application notes, and support documentation, customers are encouraged to visit the official NXP Semiconductors website or contact their sales representatives.

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