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PSMN011-60MSX

Part No PSMN011-60MSX
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V LFPAK33
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1368pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 91W (Tc)
Maximum Rds On at Id,Vgs 11.3 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK33
Dimension SOT-1210, 8-LFPAK33 (5-Lead)
Win Source Part Number 114378-PSMN011-60MSX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN011-60MSX CAD Model

Description

Product Overview: PSMN011-60MSX from NXP Semiconductors

The PSMN011-60MSX is a robust and efficient N-channel MOSFET developed by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This power MOSFET is designed to handle high currents and voltages with remarkable efficiency, making it an ideal choice for a wide range of applications, including power supplies, motor control, and automotive systems.

Key Features

  • Low On-State Resistance: The PSMN011-60MSX features an exceptionally low on-state resistance (R<sub>DS(on)) of just 11 mΩ at V<sub>GS = 10 V, which helps in reducing power losses and improving overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 120 A, this MOSFET can handle significant power levels, making it suitable for demanding applications.
  • Advanced TrenchMOS Technology: Utilizing NXP's cutting-edge TrenchMOS silicon technology, the PSMN011-60MSX offers superior performance characteristics, including fast switching speeds and improved gate charge characteristics.
  • High Temperature Operation: Capable of operating at junction temperatures up to 175°C, this MOSFET ensures reliable performance even under extreme conditions.
  • Robust Package: Encased in a TO-220 package, the PSMN011-60MSX is designed for easy mounting and heat dissipation, contributing to its durability and long service life.

Applications

The versatility of the PSMN011-60MSX MOSFET allows it to be used in a variety of applications, such as:

  • DC/DC converters and VRMs (Voltage Regulator Modules)
  • Power management for computers and servers
  • Automotive applications including electric power steering and DC motor drives
  • Switched mode power supplies (SMPS)
  • High-efficiency power inverters

Conclusion

In conclusion, the PSMN011-60MSX N-channel MOSFET from NXP Semiconductors stands out for its high current handling, low on-state resistance, and robustness in high-temperature environments. Its advanced technology and versatile package make it an excellent choice for engineers and designers looking to enhance the performance and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4925 $52.3875
35+ $2.8657 $100.2995
55+ $2.7761 $152.6855
75+ $2.6866 $201.4950
97+ $2.5970 $251.9090
129+ $2.3284 $300.3636
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Availability: 9,520 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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