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Same model may have multiple batches, images only for reference.
SI6467BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6467BDQ-T1-E3

Part No SI6467BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 6.8A 8-TSSOP
Datasheet
SI6467BDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 850mV @ 450μA
Max Gate Charge 70nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 122194-SI6467BDQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6467BDQ-T1-E3 CAD Model

Description

The Vishay 122194-SI6467BDQ-T1-E3 is a P-Channel MOSFET with a maximum drain-source breakdown voltage of 12V.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 6.8A (Ta)
  • Maximum Rds On @ 8A, 4.5V: 12.5 mOhm
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge @ 4.5V: 70nC
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 1.8V, 4.5V
  • Supply and Demand Status: Limited
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8535 $59.7450
165+ $0.7003 $115.5495
260+ $0.6784 $176.3840
355+ $0.6565 $233.0575
455+ $0.6347 $288.7885
610+ $0.5690 $347.0900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,800 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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