Product Overview: PSMN013-100ES - NXP Semiconductors

The PSMN013-100ES is a high-performance N-channel MOSFET designed and manufactured by NXP Semiconductors. This power MOSFET is engineered to deliver outstanding efficiency and power density, making it an ideal choice for a wide array of applications that demand reliable and efficient power management solutions.

Key Features

• Low On-Resistance: The PSMN013-100ES features an exceptionally low on-resistance (R<sub>DS(on)) of only 13 mΩ at a gate-source voltage of 10 V, which enhances its efficiency by minimizing conduction losses.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• 100 V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (V<sub>DS) of 100 V, providing a robust solution for circuits that experience high voltage conditions.
• Fast Switching Performance: The PSMN013-100ES is designed for fast switching, reducing switching losses and improving overall performance in high-frequency applications.
• Enhanced Thermal Performance: The MOSFET comes in a TO-220 package, known for its excellent thermal characteristics, ensuring reliable operation even under high-temperature conditions.

Applications

The versatility of the PSMN013-100ES allows it to be used in a range of applications, including:

• DC/DC Converters
• Motor Drives
• Power Supply Units
• Automotive Applications
• Switch Mode Power Supplies (SMPS)

Quality and Reliability

NXP Semiconductors is committed to providing high-quality products, and the PSMN013-100ES is no exception. It is designed to meet stringent industry standards, ensuring reliability and performance in even the most challenging environments. Whether you are developing power systems for industrial, automotive, or consumer electronics, the PSMN013-100ES offers a compact, efficient, and durable solution that you can trust.