Product Overview: PSMN013-80YS - NXP Semiconductors

The PSMN013-80YS is a high-performance, N-channel MOSFET produced by NXP Semiconductors, designed to deliver efficient power management and conversion for a broad range of applications. This device is part of NXP's NextPowerS3 portfolio, which is renowned for its state-of-the-art silicon technology that enhances overall system reliability and efficiency.

Key Features

• Low On-Resistance: The MOSFET features an exceptionally low on-resistance (R<sub>DS(on)) of just 13 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall power efficiency.
• High Current Capability: With a continuous drain current (I<sub>D) of up to 80 A, the PSMN013-80YS can handle high current loads, making it suitable for demanding power applications.
• Advanced Silicon Technology: Utilizing NXP's NextPowerS3 technology, the device offers reduced switching losses and improved thermal performance, contributing to energy savings and enhanced system longevity.
• Robust Package: Enclosed in an LFPAK56 (Power-SO8) package, the MOSFET ensures a compact footprint while providing high power density and strong mechanical robustness.

Applications

The PSMN013-80YS is versatile and can be used in various applications, including:

• DC/DC converters for server and telecom power supplies
• Motor drives and control units in automotive and industrial settings
• Synchronous rectification in power supply units
• Power management circuits in consumer electronics

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 80 V Continuous Drain Current (I<sub>D) 80 A On-Resistance (R<sub>DS(on)) 13 mΩ Gate-Source Voltage (V<sub>GS) ±20 V

The PSMN013-80YS MOSFET from NXP is a testament to the company's commitment to providing advanced semiconductor solutions that meet the evolving needs of modern electronic systems. Its exceptional performance and efficiency make it an ideal choice for designers seeking to optimize their power management strategies.