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PSMN020-100YS

Part No PSMN020-100YS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 43A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2210pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 106W (Tc)
Maximum Rds On at Id,Vgs 20.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 092638-PSMN020-100YS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN020-100YS CAD Model

Description

Product Overview: PSMN020-100YS MOSFET by NXP Semiconductors

The PSMN020-100YS from NXP Semiconductors is a state-of-the-art N-channel enhancement mode Field-Effect Transistor (FET) that is designed to deliver high performance in a wide range of applications. Crafted with precision and using advanced technology, this MOSFET is part of NXP's high-reliability product lineup, offering superior switching performance and energy efficiency.

Key Features

  • Low On-Resistance: The PSMN020-100YS boasts an extremely low on-resistance (R<sub>DS(on)) of just 100 mΩ at V<sub>GS = 10 V, which enhances its overall efficiency and reduces conduction losses.
  • High Current Capability: This MOSFET is capable of handling continuous drain currents up to 120 A, making it suitable for high-power applications.
  • Robust Thermal Performance: With an excellent thermal design, the PSMN020-100YS ensures reliable operation even at elevated temperatures, contributing to a longer lifespan and stable performance.
  • Advanced TrenchMOS Technology: Utilizing NXP's innovative TrenchMOS technology, this MOSFET provides reduced gate charge and lower switching losses, which is critical for high-frequency power conversion.

Applications

The versatility of the PSMN020-100YS allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor drives
  • Computing power supplies
  • Automotive applications
  • High-performance server and telecom power systems

Quality and Reliability

NXP Semiconductors is committed to delivering products of the highest quality. The PSMN020-100YS MOSFET is rigorously tested and guaranteed to meet stringent industry standards for reliability and performance. Its robust construction ensures that it can withstand the rigors of demanding environments while providing consistent and reliable service over its lifetime.

Environmental Compliance

The PSMN020-100YS is compliant with RoHS regulations, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive applications. NXP's dedication to sustainability means that you can count on this MOSFET to not only meet your technical requirements but also align with your environmental values.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6642 $53.1360
165+ $0.6214 $102.5310
250+ $0.6000 $150.0000
360+ $0.5571 $200.5560
470+ $0.5357 $251.7790
585+ $0.5143 $300.8655
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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