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PSMN069-100YS,115

Part No PSMN069-100YS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 645pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 72.4 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 139358-PSMN069-100YS,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN069-100YS,115 CAD Model

Description

The PSMN069-100YS,115 is a high-performance, N-channel MOSFET developed by NXP Semiconductors, a leader in innovation and technology in the semiconductor industry. This power MOSFET is designed to deliver efficient power management and conversion for a wide range of applications, including computing, automotive, and industrial systems. With its low on-resistance and high switching speed, the PSMN069-100YS,115 is an ideal choice for high-efficiency power designs.

Key Features

  • Low On-Resistance: The device boasts an exceptionally low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency, making it suitable for high-performance power applications.
  • High Current Capability: With its ability to handle a continuous drain current (ID) at elevated temperatures, this MOSFET can support applications requiring high current loads without compromising performance.
  • Robust Thermal Performance: The PSMN069-100YS,115 is encapsulated in a TO-220 package, known for its excellent thermal characteristics, ensuring reliable operation even under high power and temperature conditions.
  • Fast Switching Speed: The device is engineered for fast switching, reducing switching losses and enabling high-frequency operation, which is crucial for modern power supply designs.
  • Enhanced Durability: It features built-in protection against repetitive avalanche, ensuring longevity and stability in harsh operating environments.

Applications

The versatility of the PSMN069-100YS,115 MOSFET makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switched mode power supplies
  • Power inverters

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The PSMN069-100YS,115 MOSFET is no exception, undergoing rigorous testing and quality control measures to ensure it meets the industry's highest standards. Users can trust this product for its durability and consistent performance in their critical power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5396 $51.2620
230+ $0.4428 $101.8440
350+ $0.4289 $150.1150
485+ $0.4151 $201.3235
625+ $0.4013 $250.8125
835+ $0.3597 $300.3495
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,935 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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