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PSMN2R0-60PS

Part No PSMN2R0-60PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 137nC @ 10V
Max Input Capacitance 9997pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 338W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 089337-PSMN2R0-60PS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN2R0-60PS CAD Model

Description

Product Overview: PSMN2R0-60PS NXP MOSFET

The PSMN2R0-60PS is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This power MOSFET is designed to deliver efficiency and reliability for a wide array of applications, including but not limited to, power management, DC-DC conversion, and motor control in both industrial and automotive environments.

Key Features

  • Low On-Resistance: The PSMN2R0-60PS boasts a very low on-state resistance (R<sub>DS(on)) of just 2.07 mΩ at V<sub>GS = 10 V, which means it has excellent conduction properties, leading to reduced power losses and improved efficiency.
  • High Continuous Current: It has a high continuous drain current (I<sub>D) of 100 A, making it suitable for applications that require robust current handling capabilities.
  • 60V Drain-Source Voltage: With a drain-source voltage (V<sub>DS) of 60V, this MOSFET can be used in systems that experience high voltage spikes or transients, providing a good margin for safe operation.
  • Fast Switching Speed: The device features fast switching performance, which is critical for reducing switching losses and improving power conversion efficiency in high-frequency applications.
  • Enhanced Thermal Performance: The PSMN2R0-60PS comes in a TO-220 package, which is known for its excellent thermal dissipation characteristics, ensuring that the device operates within its temperature range even under high power conditions.

Applications

  • DC/DC Converters
  • Motor Drives
  • Power Management Solutions
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

This MOSFET is designed to provide a combination of high efficiency, reliability, and performance. Whether for switching applications or for handling high currents with minimal loss, the PSMN2R0-60PS is an excellent choice for designers looking to optimize their power circuits. NXP's commitment to quality ensures that this MOSFET meets the stringent requirements of a wide range of industrial and automotive applications, making it a versatile component in any power electronics designer's toolkit.

For detailed specifications and application notes, it is recommended to consult the PSMN2R0-60PS datasheet available on the NXP Semiconductors website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7084 $59.3344
38+ $3.0427 $115.6226
59+ $2.9477 $173.9143
81+ $2.8525 $231.0525
105+ $2.7574 $289.5270
141+ $2.4722 $348.5802
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Availability: 3,500 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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