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PSMN2R6-60PS

Part No PSMN2R6-60PS
Manufacturer NXP / Nexperia
Description N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
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Rohs State rohs
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Manufacturer NXP
Win Source Part Number 1240132-PSMN2R6-60PS
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN2R6-60PS CAD Model

Description

Introducing the PSMN2R6-60PS N-channel Power MOSFET by NXP

Discover the high-performance PSMN2R6-60PS, a cutting-edge N-channel Power MOSFET brought to you by NXP Semiconductors. This MOSFET is designed to deliver efficiency and power density in a wide range of applications. It boasts remarkable features that cater to the demanding needs of modern electronic circuits.

Key Features:

  • Low On-Resistance: The PSMN2R6-60PS has an extremely low on-resistance (R<sub>DS(on)) of just 2.6 mΩ, which significantly reduces conduction losses and enhances overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 100 A, this MOSFET can handle high current applications with ease, making it ideal for power conversion and management tasks.
  • 60V Drain-Source Voltage: The device is rated for a drain-source voltage (V<sub>DS) of 60V, providing a good balance between performance and voltage rating for a broad spectrum of applications.
  • Low Gate Charge: A low gate charge (Q<sub>G) ensures faster switching performance, which is crucial for high-frequency power switching applications.
  • Robust Package: Encased in a TO-220 package, the PSMN2R6-60PS is designed for rugged performance and is capable of withstanding tough environmental conditions.

Applications:

The PSMN2R6-60PS is versatile and can be used in various applications such as:

  • DC-DC converters
  • Motor drives
  • Power management systems
  • Computing and server power supplies
  • Automotive applications
  • Switching regulators

Advanced Technology:

NXP's PSMN2R6-60PS utilizes advanced trench MOSFET technology, which helps in achieving the low on-resistance and high switching speeds. This technology also contributes to the reduction of gate drive requirements and enhances thermal performance, making the MOSFET a reliable choice for high-efficiency power designs.

Conclusion:

The PSMN2R6-60PS from NXP is a testament to the company's commitment to providing high-quality, reliable semiconductor products. Its outstanding electrical characteristics and robust design make it an excellent choice for designers looking to optimize their power circuitry for both performance and size. Whether for industrial, automotive, or consumer applications, the PSMN2R6-60PS is engineered to meet the challenges of modern power electronics.

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