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PSMN3R0-30YLD

Part No PSMN3R0-30YLD
Manufacturer NXP / Nexperia
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 17+Rohs
Reference case SOT-669
Manufacturer NXP
Manufacturer Homepage www.nxp.com
Win Source Part Number 740850-PSMN3R0-30YLD
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN3R0-30YLD CAD Model

Description

Overview of NXP's PSMN3R0-30YLD MOSFET

The PSMN3R0-30YLD is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors. This power MOSFET is designed to deliver efficiency and power density in a wide range of applications, making it a versatile and essential component in modern electronics.

Key Features

  • Low On-Resistance: The PSMN3R0-30YLD boasts an extremely low on-resistance (R<sub>DS(on)) of just 3.0 mΩ at V<sub>GS = 10 V, which enhances its overall efficiency by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (I<sub>D) of up to 100 A, this MOSFET can handle high power applications with ease.
  • 30 V Drain-Source Voltage: The device is rated for a maximum drain-source voltage (V<sub>DS) of 30 V, suitable for a range of low to medium voltage applications.
  • Low Gate Charge: The low gate charge (Q<sub>g) ensures fast switching performance, which is critical for reducing switching losses and improving the efficiency of power conversion systems.
  • Enhanced Thermal Performance: The PSMN3R0-30YLD is encapsulated in an LFPAK56 package, which provides excellent thermal conduction thanks to its copper clip and solder die attach, leading to improved reliability and longevity.

Applications

The PSMN3R0-30YLD is ideal for a variety of applications where efficiency and power density are crucial. These include:

  • DC/DC converters
  • Power supplies for servers, telecom, and datacom
  • Motor drives
  • Battery management systems
  • Automotive applications
  • Synchronous rectification

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PSMN3R0-30YLD is no exception. It is designed to meet the stringent requirements of the automotive industry, complying with the AEC-Q101 standard for reliability. Additionally, the MOSFET's robustness is further ensured by features such as its 100% avalanche tested design, guaranteeing safe operation under extreme conditions.

Conclusion

With its combination of low on-resistance, high current capability, and fast switching performance, the PSMN3R0-30YLD from NXP is an excellent choice for engineers looking to optimize their power management systems. Its robust package design and compliance with automotive standards make it a reliable choice for a wide array of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7620 $57.1500
180+ $0.6252 $112.5360
280+ $0.6057 $169.5960
385+ $0.5862 $225.6870
495+ $0.5666 $280.4670
665+ $0.5080 $337.8200
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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