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PSMN3R2-30YLC,115

Part No PSMN3R2-30YLC,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 29.5nC @ 10V
Max Input Capacitance 2081pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 92W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 135273-PSMN3R2-30YLC,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN3R2-30YLC,115 CAD Model

Description

Overview of PSMN3R2-30YLC,115 MOSFET by NXP

The PSMN3R2-30YLC,115 is a high-performance, N-channel enhancement-mode Field Effect Transistor (MOSFET) designed and manufactured by NXP Semiconductors. This MOSFET is part of NXP's portfolio of low voltage power MOSFETs which are renowned for their efficiency and reliability. Specifically engineered for a wide range of power applications, this device is an ideal choice for power management tasks where efficiency is a priority.

Key Features

  • Low On-Resistance: The PSMN3R2-30YLC,115 features an extremely low on-resistance (R<sub>DS(on)) of 3.2mΩ at V<sub>GS = 10V, which contributes to its high efficiency by minimizing conduction losses.
  • High Continuous Drain Current: It offers a high continuous drain current (I<sub>D) of up to 100A, making it suitable for high current applications.
  • Low Threshold Voltage: The device has a low threshold voltage, ensuring it can be driven at lower gate voltages, which is beneficial for battery-operated devices.
  • Reduced Power Dissipation: Its low on-resistance and optimized gate charge result in reduced power dissipation, which enhances overall system efficiency and reduces thermal challenges.
  • Robust Thermal Performance: The PSMN3R2-30YLC,115 is encapsulated in a LFPAK33 package, which is known for its excellent thermal performance and ruggedness.

Applications

The versatility of the PSMN3R2-30YLC,115 MOSFET makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Power supplies for servers, telecom, and computing systems
  • Motor drives
  • Battery management systems
  • Automotive applications and load switches

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The PSMN3R2-30YLC,115 is no exception, as it is designed to meet the stringent requirements of the industrial and automotive markets. It is characterized by its robustness and performance stability over a wide range of temperatures and operating conditions.

Environmental Compliance

The PSMN3R2-30YLC,115 is compliant with various environmental standards, including RoHS and Halogen-Free requirements, making it a suitable choice for eco-conscious applications looking to minimize their environmental impact.

With its impressive electrical characteristics, thermal efficiency, and compliance with environmental standards, the NXP PSMN3R2-30YLC,115 MOSFET stands out as a solid choice for designers looking to optimize their power management solutions.

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