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Same model may have multiple batches, images only for reference.
SI4642DY-T1-GE3
Same model may have multiple batches, images only for reference.

SI4642DY-T1-GE3

Part No SI4642DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 30V 22.7A 8-PIN SOIC N T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 22.7 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 3.75 mΩ
Drain to Source Voltage (Vdss) 30 V
Fall Time 50 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 5.54 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 7.8 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Power Dissipation 3.5 W
Radiation Hardening No
Rds On Max 3.75 mΩ
Rise Time 180 ns
RoHS Compliant
Turn-Off Delay Time 53 ns
Turn-On Delay Time 76 ns
Win Source Part Number 1092867-SI4642DY-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4642DY-T1-GE3 CAD Model

Description

The SI4642DY-T1-GE3 is a MOSFET transistor designed for use in RF applications from Vishay.

  • Drain to Source Voltage: 30 V
  • Input Capacitance: 5.54 nF
  • Power Dissipation: 3.5 W
  • Pins: 8
  • Package: SOIC
  • Rise Time: 180 ns
  • Fall Time: 50 ns
  • Drain to Source Resistance: 3.75 mΩ
  • Continuous Drain Current: 22.7 A
  • Turn-On Delay Time: 76 ns
  • Turn-Off Delay Time: 53 ns
  • Maximum Power Dissipation: 7.8 W
  • Gate to Source Voltage: 20 V
  • RoHS: compliant
  • Maximum Temperature: 150 °C

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