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PSMN7R8-120ES

Part No PSMN7R8-120ES
Manufacturer NXP / Nexperia
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1318+
Reference case TO-262
Manufacturer NXP
Manufacturer Homepage www.nxp.com
Win Source Part Number 740852-PSMN7R8-120ES
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN7R8-120ES CAD Model

Description

Introducing the PSMN7R8-120ES MOSFET from NXP Semiconductors

Discover the exceptional PSMN7R8-120ES, a high-performance N-channel enhancement mode field-effect transistor (MOSFET) brought to you by NXP Semiconductors. This cutting-edge component is specifically designed to meet the efficiency and reliability demands of modern power management applications.

The PSMN7R8-120ES is part of NXP's famed Power-SO8 portfolio, renowned for its low on-state resistance and high switching performance. With a continuous drain current of up to 100A and a low RDS(on) of just 7.8 mΩ at VGS = 10 V, this MOSFET is optimized for reduced conduction losses, making it ideal for high-efficiency power conversion in a variety of settings.

Key Features:

  • Low On-State Resistance: The device boasts an ultra-low RDS(on) that minimizes power losses and improves overall efficiency, which is crucial for energy-sensitive applications.
  • High Continuous Drain Current: With a rating of 100A, the PSMN7R8-120ES can handle high current loads, making it suitable for demanding power applications.
  • Robust Thermal Performance: The MOSFET's package is designed for excellent thermal management, ensuring reliable operation even under high power and temperature conditions.
  • High Switching Performance: Fast switching capabilities reduce transition losses and enhance performance in high-frequency power switching applications.
  • Environmentally Friendly: Compliant with RoHS regulations, this MOSFET is designed with sustainability in mind, reducing the environmental impact of electronic components.

Applications:

  • DC/DC Converters
  • Power Supplies for Servers, Telecom, and Computing Systems
  • Motor Drives
  • Power Management in Portable Devices
  • Automotive Applications

The PSMN7R8-120ES MOSFET from NXP Semiconductors is an excellent choice for engineers and designers looking to enhance the efficiency and reliability of their power management systems. Its robust design and advanced technology ensure top-notch performance in a wide range of applications, from consumer electronics to automotive power systems. With NXP's commitment to quality and innovation, the PSMN7R8-120ES is set to be a cornerstone in the next generation of power electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.5194 $67.5970
12+ $11.0926 $133.1112
19+ $10.7460 $204.1740
25+ $10.3992 $259.9800
33+ $10.0526 $331.7358
44+ $9.0125 $396.5500
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,500 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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