ON Semiconductor 2N4403TAR PNP Transistor

The 2N4403TAR from ON Semiconductor is a PNP Bipolar (BJT) Transistor, designed for use in linear and switching applications. This versatile transistor is housed in a TO-92 package, which is known for its compact size and ease of integration into a wide range of electronic circuits.

Key Features:

• Transistor Polarity: PNP - This indicates that the transistor is a PNP type, which means it is turned on by a small current flowing out of the base.
• Collector-Emitter Voltage (VCEO): 40V - The maximum voltage that can be applied from collector to emitter with the base open.
• Collector Current (IC): 600 mA - The maximum continuous current that can flow from the collector to the emitter.
• Power Dissipation (Pd): 625 mW - The maximum power that the transistor can dissipate without exceeding its maximum junction temperature.
• DC Current Gain (hFE): 100 to 300 - A measure of the transistor's amplification factor in direct current operation.
• Operating and Storage Junction Temperature Range: -55°C to +150°C - Specifies the range of temperatures within which the transistor can safely operate and be stored.

Applications:

The 2N4403TAR transistor is suitable for a variety of applications, including but not limited to:

• Amplifier and Switching Circuits
• Signal Processing
• Power Management Functions
• Consumer Electronics
• Industrial Control Systems

ON Semiconductor's 2N4403TAR combines reliable performance with practical design, making it an excellent choice for designers and engineers looking to implement PNP transistors in their projects. Whether you're working on a simple DIY project or a complex industrial system, the 2N4403TAR offers the functionality and reliability necessary to meet your electronic needs.