2N5401YTA PNP Transistor

The 2N5401YTA is a high voltage PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a reputable leader in the semiconductor industry. This transistor is widely utilized in electronic circuits for amplification and switching applications, offering a combination of reliable performance and cost-effectiveness.

Key Features:

• Voltage Ratings: The 2N5401YTA is capable of withstanding high voltage, with a collector-emitter voltage (VCEO) of 150V, a collector-base voltage (VCBO) of 160V, and an emitter-base voltage (VEBO) of 5.0V.
• Current Handling: This component can handle a continuous collector current (IC) of up to 600 mA, making it suitable for moderate power applications.
• Power Dissipation: With a power dissipation (PD) of 625 mW, the 2N5401YTA can effectively manage the heat generated during operation, ensuring stability and longevity.
• Gain Characteristics: It offers a high current gain bandwidth product (fT) typically at 300 MHz, which is beneficial for various amplification purposes.
• Package: The transistor comes in a small TO-92 package, which is ideal for general-purpose applications where space is at a premium.

Applications:

The 2N5401YTA is versatile and can be used in a wide array of applications, including:

• Audio Amplifiers
• Signal Processing
• Switching Regulators
• Driver Stages in Hi-Fi Amplifiers and Television Circuits

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the 2N5401YTA is no exception. It is designed to meet or exceed industry standards for performance and reliability, ensuring that it can withstand the rigors of everyday use in commercial and industrial environments.

Environmental Compliance:

The 2N5401YTA from ON Semiconductor is also compliant with RoHS (Restriction of Hazardous Substances) regulations, which means it is manufactured with a conscious effort to reduce the environmental impact of hazardous substances.