The 2N6045G is a versatile and durable bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power transistor is specifically designed to handle high-power amplification and switching applications, making it an essential component in a wide range of electronic devices.

Key Features

• Device Type: BJT - Bipolar Power Transistor
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 60 V
• Collector-Base Voltage VCBO: 80 V
• Emitter-Base Voltage VEBO: 5 V
• Collector Current - Continuous IC: 8 A
• Total Device Dissipation: 75 W at 25°C
• Operating and Storage Junction Temperature Range: -65 to +150°C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Applications

The 2N6045G is highly suitable for a variety of applications that require robust performance in terms of power handling and thermal efficiency. Its common applications include:

• Power regulators
• Motor controls
• Audio amplifiers
• Switching circuits

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The 2N6045G is built to offer reliability in challenging conditions, ensuring stable operation over its wide temperature range and resistance to voltage fluctuations. This makes it a preferred choice for professionals looking for components that can withstand rigorous usage.

Environmental Compliance

The 2N6045G transistor is lead-free and RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability. This compliance ensures that the product can be used in electronic equipment that is sold in regions with strict environmental regulations, including the European Union.

With its robust design, high power handling, and compliance with environmental standards, the 2N6045G from ON Semiconductor is an excellent choice for designers and engineers looking to create reliable and efficient electronic systems.