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2N6491G

Part No 2N6491G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 15A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity PNP
Maximum Current Collector 15A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 3.5V @ 5A, 15A
Collector Cut-off Current(Max) 1mA
Typical Gain (hFE) (Min) 20 @ 5A, 4V
Maximum Power Dissipation 1.8W
Frequency - Transition 5MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 075347-2N6491G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6491G CAD Model

Description

The 2N6491G is a high-power Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor, a company renowned for its innovative and reliable semiconductor solutions. This particular transistor is designed to handle significant power levels and is commonly used in a variety of amplification and switching applications.

Key Features

  • Transistor Polarity: NPN - This means the 2N6491G is an NPN-type transistor, which primarily uses electrons as charge carriers. NPN transistors are typically used for high-speed switching and higher current applications.
  • Collector-Emitter Voltage (VCEO): 80V - The maximum voltage from collector to emitter with the base open that this transistor can withstand without breakdown.
  • Collector Current (IC): 15A - The 2N6491G can handle a collector current up to 15 amperes, making it suitable for driving high-power circuits.
  • Power Dissipation (Pd): 115W - It has a high power dissipation rating, which indicates the amount of power in the form of heat that the transistor can dissipate without being damaged.
  • DC Current Gain (hFE): 30 to 240 - This range in DC current gain allows for a consistent and reliable amplification factor, which is critical for applications requiring stable performance.

Applications

The 2N6491G is suitable for a broad spectrum of applications including:

  • Power switching circuits
  • Linear amplifiers
  • Audio amplifiers
  • Regulators
  • Motor controls

Quality and Reliability

ON Semiconductor is committed to high standards of quality and reliability, and the 2N6491G is no exception. It is designed to meet the rigorous demands of commercial and industrial electronic devices. The device is housed in a TO-220 package, which is known for its robustness and thermal efficiency, ensuring a reliable performance even under challenging conditions.

Environmental Compliance

The 2N6491G adheres to environmental standards and is compliant with RoHS (Restriction of Hazardous Substances), reflecting ON Semiconductor's dedication to environmental sustainability and the production of eco-friendly products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6426 $57.8340
220+ $0.5274 $116.0280
340+ $0.5109 $173.7060
470+ $0.4943 $232.3210
605+ $0.4779 $289.1295
810+ $0.4285 $347.0850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,300 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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