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IXTA05N100

Part No IXTA05N100
Manufacturer IXYS
Catalog FETs - Single
Description High Voltage MOSFET | MOSFET N-CH 1000V 0.75A TO-263
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 750mA
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 17Ohm at 375mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.8nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 40W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-263 (IXTA)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191229-IXTA05N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA05N100 CAD Model

Description

IXTA05N100 is an N-Channel MOSFET used in discrete semiconductor products by IXYS.

  • Supply and demand status: Limited
  • Popularity: Medium
  • Win Source Part Number: 1191229
  • Power Dissipation: 40W
  • Vds drain-source breakdown voltage: 1000V
  • Operating Temperature Range: -55°C ~ 150°C
  • Input Capacitance: 260pF @ 25V
  • Good choice: For those who want to ensure the smooth functioning of their electronic equipment

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.7397 $60.2734
52+ $2.2488 $116.9376
80+ $2.1783 $174.2640
110+ $2.1079 $231.8690
142+ $2.0374 $289.3108
190+ $1.8272 $347.1680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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