Product Overview: 2N6667G

The 2N6667G is a high-power bipolar junction transistor (BJT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This NPN transistor is designed for use in a variety of applications, including power switching and amplifier circuits. Its robust design and reliable performance make it suitable for demanding environments where high efficiency and thermal stability are required.

Key Features

• Voltage and Current Ratings: The 2N6667G can handle collector-emitter voltages up to 400V, and its collector current rating is up to 15A, making it suitable for high-voltage power applications.
• High Power Dissipation: With a power dissipation of 175W, this transistor is capable of handling significant amounts of power, essential for high-power circuits.
• TO-3 Package: Encased in a TO-3 metal can package, the 2N6667G offers excellent thermal conductivity and durability, ensuring a long operational life even under stressful conditions.
• Gain Bandwidth Product: It has a decent gain bandwidth product (fT) of 4MHz, which is adequate for various audio and general-purpose amplification requirements.

Applications

The 2N6667G is versatile and can be employed in numerous applications, including:

• Power regulators
• DC-DC converters
• Motor controllers
• Audio amplifiers
• Switching circuits

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2N6667G is manufactured to meet stringent quality standards, ensuring reliable performance in a wide range of operating conditions. Its robust construction is designed to withstand thermal and electrical stresses, providing a dependable solution for your power control and amplification needs.

Environmental Compliance

The 2N6667G complies with RoHS (Restriction of Hazardous Substances) directives, making it an environmentally friendly choice for manufacturers looking to create sustainable products without compromising on performance.