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2SA1179N6-TB-E

Part No 2SA1179N6-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.15A CP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 135 @ 1mA, 6V
Maximum Power Dissipation 200mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-CP
Win Source Part Number 098333-2SA1179N6-TB-E
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1179N6-TB-E CAD Model

Description

2SA1179N6-TB-E - ON Semiconductor

The 2SA1179N6-TB-E is a high-performance PNP transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This electronic component is designed for general-purpose amplifier and switching applications, offering a robust and reliable solution for a wide range of electronic circuits.

Key Features:

  • Voltage Ratings: The transistor has a collector-base voltage (VCBO) of -50 V, a collector-emitter voltage (VCEO) of -50 V, making it suitable for medium voltage applications.
  • Current Ratings: It supports a continuous collector current (IC) of up to -150 mA, ensuring it can handle moderate levels of current without overheating or failing.
  • High Gain Bandwidth Product: With a transition frequency (fT) of 120 MHz, the 2SA1179N6-TB-E provides excellent frequency response, making it ideal for applications requiring high-speed switching.
  • Low Saturation Voltage: The transistor features low collector-emitter saturation voltage, which helps in reducing power loss and improving efficiency in various applications.
  • Miniature Package: Enclosed in a compact SOT-346 package, the 2SA1179N6-TB-E is designed for space-constrained applications, providing significant performance in a small footprint.
  • RoHS Compliant: This product is compliant with RoHS standards, ensuring it meets global environmental and health safety requirements.

Applications:

The versatility of the 2SA1179N6-TB-E makes it an excellent choice for a variety of applications, including:

  • Audio Amplifiers
  • Signal Processing
  • Power Management Circuits
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the 2SA1179N6-TB-E is no exception. Manufactured with state-of-the-art technology, this transistor is built to deliver consistent performance and withstand the rigors of everyday use. Customers can trust in the durability and longevity of this component, making it a reliable choice for both commercial and industrial applications.

Whether you're designing a new audio system or looking to upgrade existing electronic equipment, the 2SA1179N6-TB-E from ON Semiconductor offers the performance and reliability that engineers and technicians require for their demanding applications.

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