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2SB1215S-E

Part No 2SB1215S-E
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 100V 3A TP / Bipolar (BJT) Transistor PNP 100 V 3 A 130MHz 1 W Through Hole TP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V
Power - Max 1 W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Product Number 2SB1215
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-2SB1215S-E,ONSONS2SB1215S-E
Standard Package 500
Win Source Part Number 1036759-2SB1215S-E
Ultra Librarian 3D Model Ultra Librarian 2SB1215S-E CAD Model

Description

Product Overview: 2SB1215S-E by ON Semiconductor

The 2SB1215S-E is a high-performance PNP bipolar transistor developed by ON Semiconductor, a leader in the semiconductor industry. This device is designed to cater to a wide range of applications that require efficient power regulation and switching. The 2SB1215S-E is characterized by its low VCE(sat) and high current capabilities, making it an ideal choice for high-power and high-efficiency applications.

Key Features

  • Low Saturation Voltage: The 2SB1215S-E boasts a low collector-emitter saturation voltage, which minimizes power loss and enhances overall efficiency, particularly beneficial in low-voltage operations.
  • High Current Capacity: Capable of handling high currents, this transistor is suitable for power amplification and switching applications that demand robust current management.
  • Fast Switching Speed: The device's quick switching response is advantageous in circuits that require high-speed operation, contributing to improved performance and reduced switching losses.
  • Complementary NPN Type: This PNP transistor has a complementary NPN type available, which allows for the creation of efficient push-pull amplifier configurations.
  • Applications: The 2SB1215S-E is versatile and can be used in a variety of applications, including power supply circuits, audio amplifiers, motor controllers, and other power management solutions.

Product Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) -50 V
Collector Current (IC) -2 A
Power Dissipation (PD) 1 W
Operating Temperature Range (Tj) -55°C to +150°C

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2SB1215S-E undergoes rigorous testing and quality control measures to ensure reliability and performance in demanding environments. The device is also RoHS compliant, adhering to environmental standards and ensuring a sustainable product lifecycle.

For engineers and designers looking for a reliable PNP transistor with high power handling and efficiency, the 2SB1215S-E from ON Semiconductor is an excellent choice that promises to meet and exceed performance expectations.

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