The 2SC2757-T33 from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide array of electronic applications. This versatile component is well-suited for switching and amplification purposes, offering a blend of low power consumption and high efficiency that makes it an ideal choice for modern electronic circuits.

Key Features

• High Current Gain Bandwidth Product: The 2SC2757-T33 boasts a high transition frequency, making it suitable for applications requiring fast switching and high-frequency operation.
• Low Saturation Voltage: This transistor operates with a low collector-emitter saturation voltage, which reduces power dissipation and improves overall efficiency.
• High Reliability: Manufactured by ON Semiconductor, a leader in the industry, the 2SC2757-T33 is built to last and perform reliably even under challenging conditions.
• Compact SOT-23 Package: The small surface-mount package is designed for optimal space-saving on PCBs, making it a great choice for compact electronic designs.

Applications

The 2SC2757-T33 is suitable for a vast range of applications, including but not limited to:

• Audio amplifiers and pre-amplifiers
• Signal processing
• Switching regulators
• Driver stages in hi-fi systems and TVs
• Power management in portable devices

Technical Specifications

Parameter Value Collector-Emitter Voltage (Vceo) 20V Collector-Base Voltage (Vcbo) 30V Emitter-Base Voltage (Vebo) 5V Collector Current (Ic) 500mA Power Dissipation (Pd) 150mW DC Current Gain (hFE) 100 to 320 Transition Frequency (fT) 250MHz

With its robust construction, the 2SC2757-T33 from ON Semiconductor delivers consistent performance and is an excellent choice for designers looking to enhance the efficiency and reliability of their electronic products.