2SC3361S6-TB - ON Semiconductor

The 2SC3361S6-TB is a high-performance NPN silicon RF bipolar transistor designed and manufactured by the renowned ON Semiconductor. This component is specifically engineered for RF amplification and oscillation in commercial and industrial applications. With its robust design, the 2SC3361S6-TB offers excellent frequency response and is a perfect choice for demanding environments where reliability and efficiency are paramount.

Key Features

• High Gain Bandwidth Product: The transistor boasts a high fT (transition frequency) which ensures a wide bandwidth for RF amplification, making it suitable for high-frequency applications.
• Low Noise Figure: It offers a low noise figure, which is critical for maintaining signal integrity in communication systems and sensitive RF circuits.
• High Power Gain: The device is capable of delivering high power gain, which is essential for amplifying weak RF signals without significant loss of power.
• Miniature Package: The SOT-23 package is compact and suitable for space-constrained applications, while also providing good thermal performance.

Applications

The 2SC3361S6-TB transistor is versatile and can be used in a variety of RF applications, including but not limited to:

• Low Noise RF Amplifiers
• VHF and UHF Oscillators
• Mixers and Multipliers
• IF Stages in TV and Radio Receivers
• Wireless Communication Devices

Product Specifications

Parameter Value Configuration Single Collector-Emitter Voltage (Vceo) 12V Collector-Base Voltage (Vcbo) 25V Emitter-Base Voltage (Vebo) 2V Collector Current (Ic) 50mA Power Dissipation (Pd) 300mW Operating Temperature Range -55°C to +150°C

With its superior performance and reliability, the 2SC3361S6-TB from ON Semiconductor is an excellent choice for designers and engineers looking to enhance their RF circuit designs.