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2SC4134T-E

Part No 2SC4134T-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 1A TP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 400mV @ 40mA, 400mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 100mA, 5V
Maximum Power Dissipation 800mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TP
Win Source Part Number 075491-2SC4134T-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC4134T-E CAD Model

Description

The ON Semiconductor 2SC4134T-E is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is known for its excellent current gain characteristics and high-speed switching capabilities, making it an ideal choice for audio amplifiers, power management systems, and various other high-frequency signal processing circuits.

Key Features

  • High Current Gain: The 2SC4134T-E offers a high current gain bandwidth product, which ensures efficient current amplification in electronic circuits.
  • Fast Switching Speed: With its rapid switching response, this transistor is suitable for high-speed and high-frequency applications.
  • Low Collector-Emitter Saturation Voltage: This feature minimizes power loss and improves efficiency, particularly in low-voltage applications.
  • High Reliability: Built with ON Semiconductor's quality manufacturing processes, the 2SC4134T-E is reliable and durable for long-term use.

Applications

The 2SC4134T-E transistor is versatile and can be used in various applications, including:

  • Audio amplifiers and sound processing equipment
  • Power supply circuits
  • DC-DC converters
  • Motor control circuits
  • Signal amplification in communication devices

Product Specifications

Parameter Value
Configuration Single
Collector- Base Voltage (VCBO) 230V
Collector-Emitter Voltage (VCEO) 230V
Emitter-Base Voltage (VEBO) 5V
Collector Current (IC) 1.5A
Power Dissipation (PD) 25W
Operating Temperature Range -55°C to +150°C

With its robust construction and excellent electrical characteristics, the ON Semiconductor 2SC4134T-E NPN transistor is a solid choice for designers and engineers looking for a reliable component capable of delivering high-performance results.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.5322 $58.9186
32+ $3.7191 $119.0112
49+ $3.6024 $176.5176
67+ $3.4858 $233.5486
86+ $3.3703 $289.8458
115+ $3.0215 $347.4725
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Availability: 1,080 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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