The 2SC4168-4-TB-E from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This transistor is well-suited for amplification and switching applications, offering a balance of good linearity and high power handling capabilities.

Key Features

• High Current Gain Bandwidth Product: With a transition frequency (fT) typically rated at 30 MHz, this BJT can be used in applications requiring high-speed switching.
• High Collector-Emitter Voltage: The 2SC4168-4-TB-E supports a collector-emitter voltage (VCEO) of 400V, making it suitable for high voltage circuits.
• Collector Current: It can handle a continuous collector current (IC) of up to 1.5A, ensuring robust performance for a variety of loads.
• Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage, which helps to minimize power loss and improve efficiency in switching applications.
• TO-220B Package: The device comes in a TO-220B package, which is known for its good heat dissipation properties, allowing it to handle higher currents without overheating.

Applications

The 2SC4168-4-TB-E is designed for general-purpose amplifier and high-speed switching applications. It is commonly used in power supply circuits, motor controllers, audio amplifiers, and inverter circuits. Its robustness makes it an excellent choice for commercial, industrial, and even high reliability environments where consistent performance is required.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the 2SC4168-4-TB-E is no exception. It is manufactured to meet stringent standards, ensuring a reliable performance in a wide range of operating conditions. Engineers can design with confidence knowing that this transistor will provide a stable and long-lasting performance in their electronic circuits.