Product Overview: 2SC4616E-TL-E by ON Semiconductor

The 2SC4616E-TL-E is a high-performance NPN bipolar transistor manufactured by ON Semiconductor, a leader in energy-efficient innovations. This discrete semiconductor product is designed to meet the requirements of a wide range of electronic applications, particularly in the power management and signal amplification domains.

This bipolar transistor is characterized by its low V_CE(sat), which indicates a low collector-emitter saturation voltage. This feature makes it an excellent choice for applications where efficient power handling and minimal voltage drop are critical. The 2SC4616E-TL-E is also known for its high current gain bandwidth product (f_T), which ensures that the device can handle high-frequency signals effectively, making it suitable for amplification purposes in RF applications.

The device comes in a small surface-mount package, specifically the SOT-416 (SC-75A) package, which is known for its compact footprint. This allows for high-density mounting and is ideal for space-constrained applications. The small size, however, does not compromise the transistor's performance, as it is capable of handling a collector current of up to 100 mA and a power dissipation of 150 mW, ensuring reliability in operation.

The 2SC4616E-TL-E is also characterized by its high reliability and long operational life, thanks to ON Semiconductor's commitment to quality and the rigorous testing that each component undergoes before being shipped. It is designed to operate within a wide range of temperatures, from -55°C to +150°C, which makes it suitable for use in harsh environments and ensures stable performance under varying conditions.

This component is not only powerful but also environmentally friendly. The 2SC4616E-TL-E is lead-free and complies with the RoHS directive, making it a responsible choice for manufacturers looking to create eco-friendly products without compromising on quality or performance.

In summary, the 2SC4616E-TL-E from ON Semiconductor is a versatile, high-performance NPN bipolar transistor that offers low power loss, high-frequency operation, and a compact form factor, making it an ideal choice for a variety of electronic applications.