ON Semiconductor 2SC5658RM3T5G NPN Bipolar Transistor

The ON Semiconductor 2SC5658RM3T5G is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor offers a perfect balance of efficiency and reliability, making it an ideal choice for designers and engineers looking to optimize their circuit designs.

Constructed with ON Semiconductor's cutting-edge technology, the 2SC5658RM3T5G transistor is characterized by its low collector-emitter saturation voltage and high current gain bandwidth product. These features make it particularly suitable for amplification and switching applications where power efficiency is crucial.

Key Specifications:

• Transistor Polarity: NPN
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 7V
• Collector Current (IC): 150mA
• Power Dissipation (Pd): 200mW
• DC Current Gain (hFE): 120 to 560 at 10mA
• Transition Frequency (fT): 250MHz
• Operating and Storage Junction Temperature Range: -55 to +150°C

The 2SC5658RM3T5G comes in a small SOT-723 package, which is not only space-saving but also ensures low thermal resistance, allowing for better thermal management within electronic devices. This feature makes the transistor a great choice for portable and compact electronics where space is at a premium.

ON Semiconductor's commitment to quality means that the 2SC5658RM3T5G is designed to meet the rigorous standards of the electronics industry. It is suitable for use in a variety of applications, including but not limited to signal processing, power management, and audio amplifiers. Its robustness and reliability also make it an excellent component for use in harsh environments.

Whether you are designing consumer electronics, industrial control systems, or communication devices, the ON Semiconductor 2SC5658RM3T5G offers performance that can help enhance the efficiency and longevity of your products.